Panasonic 2SC4835G Manuel d'utilisateur télécharger pdf

Transistors

Publication date: May 2007 SJC00368AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC4835G

Silicon NPN epitaxial planar type

For UHF band low-noise amplification

■ Features

• Low noise figure NF

• High forward transfer gain S

21e



• High transition frequency f

• S-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing

■ Absolute Maximum Ratings T

= 25°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

CBO

= 10 µA, I

= 015V

Collector-emitter voltage (Base open) V

CEO

= 100 µA, I

= 010 V

Collector-base cutoff current (Emitter open)

CBO

= 10 V, I

= 01µA

Emitter-base cutoff current (Collector open)

EBO

= 2 V, I

= 01µA

Forward current transfer ratio

1, 2

= 8 V, I

= 20 mA 50 200 

Transition frequency f

= 8 V, I

= 15 mA, f = 800 MHz 5 6 GHz

Collector output capacitance C

= 10 V, I

= 0, f = 1 MHz 0.7 1.2 pF

(Common base, input open circuited)

Forward transfer gain S

21e



= 8 V, I

= 15 mA, f = 800 MHz 11 14 dB

Maximum unilateral power gain G

= 8 V, I

= 15 mA, f = 800 MHz 15 dB

Noise figure NF V

= 8 V, I

= 7 mA, f = 800 MHz 1.3 2.0 dB

■ Electrical Characteristics T

= 25°C ± 3°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

CBO

15 V

Collector-emitter voltage (Base open) V

CEO

10 V

Emitter-base voltage (Collector open) V

EBO

Collector current I

80 mA

Collector power dissipation P

150 mW

Junction temperature T

150 °C

Storage temperature T

stg

−55 to +150 °C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

1: Pulse measurement

2: Rank classification

Rank Q R S

50 to 100 80 to 130 100 to 200

■ Package

•

Code

SMini3-F2

•

Marking Symbol: 3M

•

Pin Name

1: Base

2: Emitter

3: Collector

1 2 3 4

2SC4835G 1
SMini3-F2 Unit: mm 3

Résumé du contenu

Page 1 - 2SC4835G

Transistors1Publication date: May 2007 SJC00368AEDThis product complies with the RoHS Directive (EU 2002/95/EC).2SC4835GSilicon NPN epitaxial planar t

Page 2

2SC4835G2SJC00368AEDThis product complies with the RoHS Directive (EU 2002/95/EC).VCE(sat)  IChFE  ICfT  ICPC  TaIC  VCEIC  VBECob  VCBGUM  IC

Page 3 - SMini3-F2 Unit: mm

This product complies with the RoHS Directive (EU 2002/95/EC).SMini3-F2 Unit: mm0.30+0.05−0.020.13+0.05−0.022.00 ±0.20(0.89)0.90 ±0.10(0.65)(0.65)

Page 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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Panasonic 2SC4835G Manuel d'utilisateur

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