Panasonic MA22D28 Manuel d'utilisateur

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Schottky Barrier Diodes (SBD)
Publication date: October 2003 SKH00126AED
MA22D28
Silicon epitaxial planar type
For high speed switching
Features
Forward current I
F(AV)
= 1.5 A rectification is possible
Low forward voltage V
F
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Forward current (Average)
*
1
I
F(AV)
1.5 A
Non-repetitive peak forward I
FSM
30 A
surge current
*
2
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 0.5 A 0.34 0.38 V
V
F2
I
F
= 1.0 A 0.38 0.42
V
F3
I
F
= 1.5 A 0.42 0.46
Reverse current I
R
V
R
= 30 V 100 µA
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 50 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 13 ns
I
rr
= 10 mA , R
L
= 100
Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3.
*
: t
rr
measuring instrument
1: Anode
2: Cathode
Mini2-F1 Package
Unit: mm
1.6
±0.1
1
2
0.80
±0.05
0.55
±0.1
0.16
+0.1
–0.06
3.5
±0.1
2.6
±0.1
0.45
±0.1
0 to 0.1
0 to 0.3
0 to 0.1
90%
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
I
F
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form
Analyzer
(SAS-8130)
R
i
= 50
V
R
A
Marking Symbol: 3Z
Note)
*
1: Mounted on a alumina PC board
*
2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
This product complies with the RoHS Directive (EU 2002/95/EC).
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Résumé du contenu

Page 1 - Silicon epitaxial planar type

1Schottky Barrier Diodes (SBD)Publication date: October 2003 SKH00126AEDMA22D28Silicon epitaxial planar typeFor high speed switching Features• Forwar

Page 2 - Time t (s)

MA22D282SKH00126AEDIF  VFIR  VRCt  VR0 0.2 0.4 0.6 0.8 1.0 1.210−310−210−1110102104103Forward voltage VF (V)Forward current IF (mA)Ta = 150°C75

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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