Panasonic MA271110G Manuel d'utilisateur

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Switching Diodes
1
Publication date: October 2007 SKF00072AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA271110G
Silicon epitaxial planar type
For high-speed switching circuits
Features
High-density mounting is possible
Short reverse recovery time t
rr
Small terminal capacitance C
t
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage V
RM
80 V
Forward current I
F
100 mA
Peak forward current I
FM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
55 to +150 °C
Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 0.95 1.20 V
Reverse
voltage V
R
I
R
= 100 µA80
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 0.6 2.0 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 I
R
, R
L
= 100
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3.
*
: t
rr
measurement circuit
Note)
*
: t = 1 s
Package
Code
SSSMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: S
Vue de la page 0
1 2 3 4

Résumé du contenu

Page 1 - MA271110G

Switching Diodes1Publication date: October 2007 SKF00072AEDThis product complies with the RoHS Directive (EU 2002/95/EC).MA271110GSilicon epitaxial pl

Page 2

2MA271110GSKF00072AEDThis product complies with the RoHS Directive (EU 2002/95/EC).10−20 0.2 0.4 0.6 0.8 1.0 1.210−1110102103Forward voltage VF (V)F

Page 3 - SSSMini2-F3 Unit: mm

MA271110G3SKF00072AEDThis product complies with the RoHS Directive (EU 2002/95/EC).SSSMini2-F3 Unit: mm1.40 ±0.050.27+0.05−0.03210.60 ±0.051.00 ±0.050

Page 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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