Panasonic MA24D58 Manuel d'utilisateur

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Schottky Barrier Diodes (SBD)
Publication date: April 2008 SKH00224AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA24D58
Silicon epitaxial planar type
For high-frequency rectication in switching power supplies
For prevention of reverse current from batteries in mobile devices
Overview
MA24D58 is optimal for on-board power supplies and power supplies in
mobile application.
Features
Forward current (Average) I
F(AV)
= 3.0 A rectication is possible
Small reverse current I
R
Panasonic's unique wireless bonding structure assures a highsurge resistance
(I
FSM
= 50 A).
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
60 V
Maximum peak reverse voltage V
RM
60 V
Forward current
*
1
I
F
3.0 A
Non-repetitive peak forward surge
current
*
2
I
FSM
50 A
Junction temperature T
j
150
°C
Storage temperature T
stg
–40 to +150
°C
Note) *1: Mounted on an alumina PC board (board: 20 mm × 50 mm × 0.8 t,
soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
*
2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward current V
F
I
F
= 3.0 A 0.5 0.6 V
Reverse current I
R
V
R
= 60 V 11 150
µA
Terminal capacitance
*
4
C
t
V
R
= 10 V, f = 1 MHz 440 pF
Reverse recovery time
*
1, 4
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA
R
L
= 100 W
31 ns
Thermal resistance
R
th(j-a)
*
2, 4
Mounted on an alumina PC board
55
°C/W
R
th(j-a)
*
3, 4
Mounted on a glass epoxy PC board
110
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*
1: t
rr
test Circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50
Wave Form Analyzer
(SAS-8130)
R
i
= 50
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 100 mA
R
L
= 100
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
*2: Mounted on an alumina PC board (board: 20 mm × 50 mm × 0.8 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
*3: Mounted on a glass epoxy PC board (board: 20 mm × 50 mm × 1.0 t, soldering land: 2.0 mm × 2.0 mm + 20 mm × 0.8 mm)
*4: Design guaranteed
Package
Code
TMiniP2-F1
Pin Name
1: Anode
2: Cathode
Marking Symbol: 6T
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Résumé du contenu

Page 1 - Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) Publication date: April 2008 SKH00224AED 1 This product complies with the RoHS Directive (EU 2002/95/EC).MA24D58Silic

Page 2 - TMiniP2-F1 Unit: mm

MA24D58 2 SKH00224AED This product complies with the RoHS Directive (EU 2002/95/EC).TMiniP2-F1 Unit: mm2.40 ±0.100.15 ±0.051.75 ±0.053.80 ±0.050.45

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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