Panasonic Fast Recovery Diodes MA3DF40 Manuel d'utilisateur

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Fast Recovery Diodes (FRD)
Publication date: October 2007 SKJ00021AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA3DF40
Silicon Mesa type
For high frequency rectication
For plasma display panel drive
Features
High switching speed t
rr
Soft recovery
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
370 V
Non-repetitive peak reverse surge voltage
V
RSM
430 V
Forward current T
C
= 25°C I
F
20 A
Non-repetitive peak forward surge current
*
I
FSM
100 A
Junction temperature T
j
–40 to +150
°C
Storage temperature T
stg
–40 to +150
°C
Note)
*
: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 20 mA 1.2 1.4 V
Reverse current I
RRM
V
RRM
= 370 V 10
mA
Reverse recovery time
*
t
rr
I
F
= 0.5 A, I
R
= 1.0 A
I
rr
= 0.25 A
20 35 ns
Thermal resistance (j-a) R
th(j-c)
3.0
°C/W
Thermal resistance (j-c) R
th(j-a)
63
°C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3.
*
: t
rr
measurement circuit
D.U.T
t
rr
0.25 × I
R
I
F
I
R
50
5.5
50
Package
Code
TO-220D-A1
Pin Name
1: Anode
2: Cathode
3: Anode
Marking Symbol: MA3DF40
Intemal Connection
1 32
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Résumé du contenu

Page 1 - Silicon Mesa type

Fast Recovery Diodes (FRD) Publication date: October 2007 SKJ00021AED 1 This product complies with RoHS Directive (EU 2002/95/EC).MA3DF40Silicon Me

Page 2 - TO-220D-A1 Unit: mm

MA3DF40 2 SKJ00021AED This product complies with RoHS Directive (EU 2002/95/EC).5.08 ±0.50Solder Dip9.9 ±0.315.0 ±0.513.7 ±0.21.4 ±0.21.6 ±0.20.8 ±

Page 3

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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