Panasonic Band Switching Diodes MA27077G Manuel d'utilisateur

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Publication date: October 2007 SKG00019AED
Band Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA27077G
Silicon epitaxial planar type
For band switching
Features
Low forward dynamic resistance r
f
Less voltage dependence of diode capacitance C
D
SSS-Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
35 V
Forward current I
F
100 mA
Operating ambient temperature
*
T
opr
25 to +85 °C
Storage temperature T
stg
55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 0.92 1.00 V
Reverse current I
R
V
R
= 33 V 0.01 100.00 nA
Diode capacitance C
D
V
R
= 6 V, f = 1 MHz 0.9 1.2 pF
Forward dynamic resistance
*
r
f
I
F
= 2 mA, f = 100 MHz 0.65 0.85
Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
: Maximum ambient temperature during operation.
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Package
Code
SSSMini2-F3
Pin Name
1: Anode
2: Cathode
Marking Symbol: C
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Résumé du contenu

Page 1 - MA27077G

1Publication date: October 2007 SKG00019AEDBand Switching DiodesThis product complies with the RoHS Directive (EU 2002/95/EC).MA27077GSilicon epitaxi

Page 2

MA27077G2SKG00019AEDThis product complies with the RoHS Directive (EU 2002/95/EC).IF  VFCD  VRCD  TaIR  Ta0120100806040200 0.4 0.8 1.2Forward volt

Page 3 - SSSMini2-F3

MA27077G3SKG00019AEDThis product complies with the RoHS Directive (EU 2002/95/EC).SSSMini2-F3Unit: mm1.40 ±0.050.27+0.05−0.03210.60 ±0.051.00 ±0.050.5

Page 4

Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the produc

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